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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
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The Wideband IC Line
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31 dB Drain Efficiency -- 15% ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth Driver Application Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31.5 dB ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * Also Available in Gull Wing for Surface Mount * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1 MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230MBR1
CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2230GMBR1
VRD1 VRG1 VDS2 VDS1
PIN CONNECTIONS
GND VDS2 VRD1 VRG1 VDS1 RFin VDS3/RFout VGS1 VGS2 VGS3 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND
3 Stages IC
14
RFin
VDS3/ RFout
VGS1 VGS2 VGS3
Quiescent Current Temperature Compensation
13 12
GND
Functional Block Diagram
(Top View) NOTE: Exposed backside flag is source terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987.
REV 2
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MW4IC2230MBR1 MW4IC2230GMBR1 1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Channel Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value 65 - 0.5, +8 - 65 to +175 175 20 Unit Vdc Vdc C C dBm
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RJC Value (1) 10.5 5.1 2.3 Unit C/W
ESD PROTECTION CHARACTERISTICS
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Test Conditions Human Body Model Machine Model Charge Device Model
Class 2 (Minimum) M3 (Minimum) C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22 - A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Peak/Avg. Ratio = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Input Return Loss Adjacent Channel Power Ratio Pout = 0.4 W Avg. Pout = 1.26 W Avg. Stability (10 mWNo Spurious > - 60 dBc
TYPICAL PERFORMANCES (In Motorola Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, 2110 MHz(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (continued)
MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 2
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ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit TYPICAL PERFORMANCES (In Motorola Reference Application Circuit tuned for 2 - carrier W - CDMA signal) VDD = 28 Vdc, Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps IM3 ACPR IRL -- -- -- -- 31.5 - 52 - 55 - 26 -- -- -- -- dB dBc dBc dB
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MOTOROLA RF DEVICE DATA
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VD2 + VD1 + C1 RF INPUT C6 Z1 6 C10 VG1 VG2 VG3 R1 R2 R3 7 NC 8 9 10 11 Quiescent Current Temperature Compensation NC 13 12 + C8 C4 C11 C12 C2 C5 1 2 3 NC 4 NC 5 DUT 16 NC 15 Z2 C7 + C3 VD3
C9 14 Z4 Z5 Z6 Z7
RF OUTPUT
Z3
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Z1 Z2, Z3 Z4 Z5
2.180 0.040 0.350 0.420
x 0.090 Microstrip x 0.430 Microstrip x 0.240 Microstrip x 0.090 Microstrip
Z6 Z7 PCB
1.120 x 0.090 Microstrip 0.340 x 0.090 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 1. MW4IC2230MBR1(GMBR1) Test Circuit Schematic
Table 1. MW4IC2230MBR1(GMBR1) Test Circuit Component Designations and Values
Part C1, C2, C3, C4 C5, C6, C7, C8, C12 C9, C10 C11 R1, R2, R3 Description 10 F, 35 V Tantalum Capacitors 8.2 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 0.3 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJD106K035 100B8R2CW 100B1R8BW 100B0R3BW Manufacturer AVX ATC ATC ATC
MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 4
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C2 VD2
MW4IC2230 Rev 1
C3
VD1
VD3 C5
C7
C1 C6 C12 C9 C11
C10 R1 VG1 R2 VG2 R3 VG3 C8
Freescale Semiconductor, Inc...
GND
C4
Figure 2. MW4IC2230MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS
32 Gps 31 G ps , POWER GAIN (dB) 30 29 28 27 26 2050 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA ACPR -10 -20 -30 -40 -50 -60 2100 2150 f, FREQUENCY (MHz) 2200 0 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
IRL
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Figure 3. Single - Carrier W - CDMA Wideband Performance
IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
32 Gps 31 G ps , POWER GAIN (dB) 30 IRL 29 28 27 26 2050 VDD = 28 Vdc Pout = 31 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA
0 -10 -20 -30 -40 ACPR -50 -60 2100 2150 f, FREQUENCY (MHz) 2200
-40 VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA f = 2140 MHz, 1-Carrier W-CDMA TC = 85_C
-45
25_C
-50
-30_C
-55
-60 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10
Figure 4. Single - Carrier W - CDMA Wideband Performance
Figure 5. Adjacent Channel Power Ratio versus Output Power
IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD3, INTERMODULATION DISTORTION (dBc)
33 32 G ps , POWER GAIN (dB) 31 30 29 28 27 2050 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA 2-Carrier W-CDMA Gps IRL
0 -10 -20 -30 -40 IMD3 ACPR 2100 2150 f, FREQUENCY (MHz) 2200 -50 -60
Figure 6. 2 - Carrier W - CDMA Wideband Performance
MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 6
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TYPICAL CHARACTERISTICS
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 2 4
2.00 P3dB = 46.3 dBm (43 W) Ideal 1.95 1.90 P1dB = 45.3 dBm (34 W) Actual DELAY (ns) 1.85 1.80 1.75 1.70 1.65 1.60 1.55 24 1.50 1950 2000 2050 2100 2150 2200 2250 2300 VDD = 28 Vdc, Small Signal IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA
Pout , OUTPUT POWER (dBm)
VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, f = 2140 MHz Pulsed CW, Frequency 1 kHz, Duty Cycle 10% 6 8 10 12 14 16 18 20 22
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Pin, INPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 7. Output Power versus Input Power
1.E+09 MTTF FACTOR (HOURS X AMPS 2 ) 3rd Stage 2nd Stage 1.E+07 1st Stage
Figure 8. Delay versus Frequency
1.E+08
1.E+06
1.E+05
1.E+04 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Temperature Junction
MOTOROLA RF DEVICE DATA
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MW4IC2230MBR1 MW4IC2230GMBR1 7
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Zload* f = 2230 MHz
Zin* f = 2050 MHz
f = 2050 MHz f = 2230 MHz
Zo = 50
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VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm f MHz 2050 2110 2140 2170 2230 Zin Zin 42.18 + j1.49 41.06 - j1.30 40.49 - j2.42 40.05 - j3.45 39.29 - j6.31 Zload 8.52 - j0.46 8.58 - j0.20 8.63 - j0.09 8.69 - j0.01 8.81 + j0.04
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Z
in
Z
load
Figure 10. Series Equivalent Input and Load Impedance MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 8
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NOTES
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MOTOROLA RF DEVICE DATA
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MW4IC2230MBR1 MW4IC2230GMBR1 9
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PACKAGE DIMENSIONS
2X
B
PIN ONE INDEX
E1
aaa
M
r1 CA B
A
NOTE 6
4X
e1 e2 D1 e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
Freescale Semiconductor, Inc...
aaa
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
F Y
ZONE "J"
E2
Y
A1 7 A2
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09 ISSUE J TO - 272 WB - 16 PLASTIC MW4IC2230MBR1
MW4IC2230MBR1 MW4IC2230GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 10
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CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y - Y
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
aaa
M
b1 CA
Freescale Semiconductor, Inc.
2X
aaa
M
r1 CAB
E1
B
A
PIN ONE INDEX
4X
aaa
M
b1 CA
NOTE 6
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
Freescale Semiconductor, Inc...
aaa
M
aaa
M
b CA
E
DETAIL Y DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A - 03 ISSUE B TO - 272 WB - 16 GULL PLASTIC MW4IC2230GMBR1
MOTOROLA RF DEVICE DATA
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MW4IC2230MBR1 MW4IC2230GMBR1 11
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y - Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
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